Toshiba
RN1962TE85LF
Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN1962
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Configuration
- Dual
- Transistor Polarity
- NPN
- Typical Input Resistor
- 10 kOhms
- Typical Resistor Ratio
- 1
- DC Collector/Base Gain hfe Min
- 50
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Pd - Power Dissipation
- 200 mW
- Emitter- Base Voltage VEBO
- 10 V
- Maximum DC Collector Current
- 100 mA
- Unit Weight
- 0.000212 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.