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Toshiba

TK9A55DA(STA4,Q,M)

MOSFET N-Ch MOS 8.5A 550V 40W 1050pF 0.86

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
MOSFET
Series
TK9A55DA
Package
TO-220FP-3
Mounting Style
Through Hole
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
550 V
Id - Continuous Drain Current
8.5 A
Rds On - Drain-Source Resistance
860 mOhms
Pd - Power Dissipation
40 W
Configuration
Single
Tradename
MOSVII
Height
15 mm
Length
10 mm
Transistor Type
1 N-Channel
Show more parameters (2)
Width
4.5 mm
Unit Weight
0.211644 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TK9A55DA(STA4,Q,M) Specifications and Datasheet | ChipSourceHub