SemiQ
GCMX080A120B2H1P
MOSFET Modules SiC 1200V 80mohm MOSFET Full-Bridge Module
Basic Information
View Datasheet ↗- Manufacturer
- SemiQ
- Product Category
- MOSFET Modules
- Series
- GCMX
- Mounting Style
- Press Fit
- Packaging
- Cut Tape
Technical Specifications
16 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 27 A
- Rds On - Drain-Source Resistance
- 77 mOhms
- Vgs - Gate-Source Voltage
- - 5 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1.8 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 119 W
- Country of Origin
- CN
- Fall Time
- 4 ns
Show more parameters (4)
- Rise Time
- 3 ns
- Type
- Full Bridge
- Typical Turn-Off Delay Time
- 18 ns
- Typical Turn-On Delay Time
- 10 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.