WeEn Semiconductors
PHE13007,127
Bipolar Transistors - BJT RAIL PWR-MOS
Basic Information
View Datasheet ↗- Manufacturer
- WeEn Semiconductors
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-220AB-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 400 V
- Collector- Base Voltage VCBO
- 700 V
- Emitter- Base Voltage VEBO
- 9 V
- Collector-Emitter Saturation Voltage
- 0.51 V
- Maximum DC Collector Current
- 8 A
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 40
- Height
- 9.4 mm
- Length
- 10.3 mm
Show more parameters (5)
- Width
- 4.7 mm
- DC Collector/Base Gain hfe Min
- 5
- Pd - Power Dissipation
- 80 W
- Part # Aliases
- 934055555127
- Unit Weight
- 0.063493 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.