Infineon Technologies
IRL60HS118
MOSFET DIFFERENTIATED MOSFETS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- OptiMOS 5
- Package
- PQFN-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 18.5 A
- Rds On - Drain-Source Resistance
- 13.3 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.1 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 8 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 2.5 W
Show more parameters (10)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- OptiMOS
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 17 S
- Fall Time
- 5 ns
- Rise Time
- 21 ns
- Typical Turn-Off Delay Time
- 9 ns
- Typical Turn-On Delay Time
- 8.4 ns
- Part # Aliases
- SP001592258
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.