Diodes Incorporated
DMG301NU-13
MOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.32W
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Series
- DMG301
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 25 V
- Id - Continuous Drain Current
- 260 mA
- Rds On - Drain-Source Resistance
- 4 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 700 mV
- Vgs - Gate-Source Voltage
- 4.5 V
- Qg - Gate Charge
- 360 pC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 320 mW
Show more parameters (9)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 1 S
- Fall Time
- 2.3 ns
- Rise Time
- 1.8 ns
- Typical Turn-Off Delay Time
- 6.6 ns
- Typical Turn-On Delay Time
- 2.9 ns
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.