Central Semiconductor
PN5133 PBFREE
Bipolar Transistors - BJT NPN 20Vcbo 18Vceo 3.0Vebo 1mA 5.0pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- PN5133
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
9 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Base Voltage VCBO
- 20 V
- Emitter- Base Voltage VEBO
- 3 V
- Collector-Emitter Saturation Voltage
- 400 mV
- Gain Bandwidth Product fT
- 40 MHz
- DC Collector/Base Gain hfe Min
- 60 at 5 V, 1 mA
- DC Current Gain hFE Max
- 1000 at 5 V, 1 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.