IXYS
IXFH14N80P
MOSFET DIODE Id14 BVdass800
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXFH14N80
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 14 A
- Rds On - Drain-Source Resistance
- 720 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 5.5 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 61 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 400 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- HiPerFET
- Height
- 21.46 mm
- Length
- 16.26 mm
- Transistor Type
- 1 N-Channel
- Type
- PolarHV HiPerFET Power MOSFET
- Width
- 5.3 mm
- Forward Transconductance - Min
- 8 S
- Fall Time
- 27 ns
- Rise Time
- 29 ns
- Typical Turn-Off Delay Time
- 62 ns
- Typical Turn-On Delay Time
- 26 ns
- Unit Weight
- 0.229281 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.