ON Semiconductor
NTLJD3119CTBG
MOSFET COMP 2X2 20V 3.8A 100mOhm
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- MOSFET
- Series
- NTLJD3119C
- Package
- WDFN-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
23 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage
- 21 V, 20 V
- Id - Continuous Drain Current
- 3.8 A
- Rds On - Drain-Source Resistance
- 100 mOhms
- Vgs - Gate-Source Voltage
- 8 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 710 mW
- Configuration
- Dual
- Channel Mode
- Enhancement
Show more parameters (11)
- Height
- 0.75 mm
- Length
- 2 mm
- Product
- MOSFET Small Signal
- Transistor Type
- 1 N-Channel, 1 P-Channel
- Type
- MOSFET
- Width
- 2 mm
- Forward Transconductance - Min
- 4.2 S, 3.1 S
- Fall Time
- 4.7 ns, 13.2 ns
- Rise Time
- 4.7 ns, 13.2 ns
- Typical Turn-Off Delay Time
- 11.1 ns, 13.7 ns
- Typical Turn-On Delay Time
- 3.8 ns, 5.2 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.