Central Semiconductor
CXT5551HC TR
Bipolar Transistors - BJT 180Vcbo 160Vceo 6.0V 1.0A 1.2W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- CXT5551HC
- Package
- SOT-89-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 180 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 0.2 V
- Pd - Power Dissipation
- 1.2 W
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 250 at 10 mA, 5 V
- Technology
- Si
Show more parameters (3)
- Continuous Collector Current
- 1 A
- DC Collector/Base Gain hfe Min
- 30 at 50 mA, 5 V
- Part # Aliases
- CXT5551HC PBFREE TR
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.