ON Semiconductor
2SB1121S-TD-E
Bipolar Transistors - BJT BIP PNP 2A 25V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SB1121
- Package
- TO-243-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 25 V
- Collector- Base Voltage VCBO
- - 30 V
- Emitter- Base Voltage VEBO
- - 6 V
- Collector-Emitter Saturation Voltage
- - 0.6 V
- Gain Bandwidth Product fT
- 150 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 400
- Continuous Collector Current
- - 2 A
- DC Collector/Base Gain hfe Min
- 65
Show more parameters (1)
- Pd - Power Dissipation
- 500 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.