Nexperia
PBSS4350SSJ
Bipolar Transistors - BJT PBSS4350SS/SO8/REEL 13" Q1/T1
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- SO-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 240 mV
- Maximum DC Collector Current
- 5 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 520
- Continuous Collector Current
- 2.7 A
- DC Collector/Base Gain hfe Min
- 300
Show more parameters (3)
- Pd - Power Dissipation
- 2 W
- Qualification
- AEC-Q101
- Unit Weight
- 0.017870 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.