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ON Semiconductor

SMMBT6521LT1G

Bipolar Transistors - BJT SS LN XSTR NPN 50V

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - BJT
Series
MMBT6521L
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
25 V
Collector- Base Voltage VCBO
40 V
Emitter- Base Voltage VEBO
4 V
Maximum DC Collector Current
100 mA
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
600
Continuous Collector Current
100 mA
DC Collector/Base Gain hfe Min
150
Show more parameters (3)
Pd - Power Dissipation
300 mW
Qualification
AEC-Q101
Unit Weight
0.003951 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SMMBT6521LT1G Specifications and Datasheet | ChipSourceHub