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Panjit

MMDT2222ATB6-AU_R1_000A1

Bipolar Transistors - BJT Dual Surface Mount NPN Transistors

Basic Information

View Datasheet ↗
Manufacturer
Panjit
Product Category
Bipolar Transistors - BJT
Package
SOT-563-6
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

17 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Dual
Maximum DC Collector Current
600 mA
Collector- Emitter Voltage VCEO Max
40 V
Collector- Base Voltage VCBO
75 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
1 V
Pd - Power Dissipation
200 mW
Gain Bandwidth Product fT
300 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Show more parameters (5)
Qualification
AEC-Q101
Country of Origin
TW
DC Collector/Base Gain hfe Min
35 at 0.1 mA, 10 V
DC Current Gain hFE Max
300 at 150 mA, 10 V
Unit Weight
0.000092 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MMDT2222ATB6-AU_R1_000A1 Specifications and Datasheet | ChipSourceHub