STMicroelectronics
STB34N50DM2AG
MOSFET Automotive-grade N-channel 500 V, 0.10 Ohm typ., 26 A MDmesh DM2 Power MOSFET in a D2PAK package
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Series
- STB34N50DM2AG
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 500 V
- Id - Continuous Drain Current
- 26 A
- Rds On - Drain-Source Resistance
- 120 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 44 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 190 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Tradename
- MDmesh
- Height
- 4.6 mm
- Length
- 10.4 mm
- Product
- Power MOSFET
- Type
- High Voltage
- Width
- 9.35 mm
- Fall Time
- 8.1 ns
- Rise Time
- 11.5 ns
- Typical Turn-Off Delay Time
- 65.5 ns
- Typical Turn-On Delay Time
- 19.5 ns
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.