Renesas / Intersil
HFA3096BZ
Bipolar Transistors - BJT W/ANNEAL TXARRAY 3X NPN 2XPNP16NSOIC MIL
Basic Information
View Datasheet ↗- Manufacturer
- Renesas Electronics
- Brand
- Renesas / Intersil
- Product Category
- Bipolar Transistors - BJT
- Series
- HFA3096
- Package
- SOIC-Narrow-16
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Quint
- Collector- Emitter Voltage VCEO Max
- 8 V
- Collector- Base Voltage VCBO
- 12 V
- Emitter- Base Voltage VEBO
- 5.5 V
- Maximum DC Collector Current
- 0.065 A
- Gain Bandwidth Product fT
- 8000 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 125 C
- Height
- 1.5 mm
- Length
- 10 mm
- Width
- 4 mm
Show more parameters (4)
- DC Collector/Base Gain hfe Min
- 40 at 10 mA, 2 V at NPN, 20 at 10 mA, 2 V at PNP
- Moisture Sensitive
- Yes
- Pd - Power Dissipation
- 150 mW
- Unit Weight
- 0.004938 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.