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Wolfspeed / Cree

PXAC200902FC-V1-R2

RF MOSFET Transistors RF LDMOS FET

Basic Information

View Datasheet ↗
Manufacturer
Cree, Inc.
Brand
Wolfspeed / Cree
Product Category
RF MOSFET Transistors
Package
H-37248-4
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

11 parameters
Transistor Polarity
Dual N-Channel
Technology
Si
Vds - Drain-Source Breakdown Voltage
65 V
Rds On - Drain-Source Resistance
220 mOhms
Gain
17.2 dB
Output Power
90 W
Maximum Operating Temperature
+ 225 C
Operating Frequency
1805 MHz to 2170 MHz
Type
RF Power MOSFET
Number of Channels
2 Channel
Vgs - Gate-Source Voltage
10 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

PXAC200902FC-V1-R2 Specifications and Datasheet | ChipSourceHub