STMicroelectronics
STY105NM50N
MOSFET N-Ch 500V 0.018 Ohm 110A Mdmesh II FET
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Series
- STY105NM50N
- Package
- Max247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 88 A
- Rds On - Drain-Source Resistance
- 22 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 25 V
- Pd - Power Dissipation
- 625 W
- Configuration
- Single
- Tradename
- MDmesh
- Transistor Type
- 1 N-Channel
Show more parameters (1)
- Unit Weight
- 1.340411 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.