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IXYS

375-501N21A-00

RF MOSFET Transistors DE-375 21A 500V N Channel MOSFET

Basic Information

View Datasheet ↗
Manufacturer
IXYS
Product Category
RF MOSFET Transistors
Package
SMD-6
Mounting Style
SMD/SMT
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
25 A
Vds - Drain-Source Breakdown Voltage
500 V
Rds On - Drain-Source Resistance
350 mOhms
Output Power
940 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Operating Frequency
50 MHz
Type
RF Power MOSFET
Forward Transconductance - Min
6.5 S
Number of Channels
1 Channel
Show more parameters (3)
Qg - Gate Charge
70 nC
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3.5 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

375-501N21A-00 Specifications and Datasheet | ChipSourceHub