Microchip Technology
MSC360SMA120SCT/RM
SiC MOSFETs MOSFET SIC 1200 V 360 mOhm PSMT
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- SiC MOSFETs
- Package
- TO-268-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
20 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 11 A
- Rds On - Drain-Source Resistance
- 450 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage
- 5 V
- Qg - Gate Charge
- 21 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 82 W
- Channel Mode
- Enhancement
Show more parameters (8)
- Configuration
- Single
- Fall Time
- 9 ns
- Product
- MOSFETs
- Rise Time
- 24 ns
- Technology
- SiC
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 11 ns
- Typical Turn-On Delay Time
- 20 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.