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Nexperia

PBHV3160ZX

Bipolar Transistors - BJT 600V 0.1A PNP high vltg low VCEsat tran

Basic Information

View Datasheet ↗
Manufacturer
Nexperia
Product Category
Bipolar Transistors - BJT
Package
SOT-223-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

14 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 600 V
Collector- Base Voltage VCBO
- 600 V
Emitter- Base Voltage VEBO
- 6 V
Collector-Emitter Saturation Voltage
- 150 mV
Maximum DC Collector Current
- 100 mA
Gain Bandwidth Product fT
38 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
70
Pd - Power Dissipation
650 mW
Show more parameters (2)
Qualification
AEC-Q101
Unit Weight
0.003623 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

PBHV3160ZX Specifications and Datasheet | ChipSourceHub