Central Semiconductor
2N4289 TIN/LEAD
Bipolar Transistors - BJT PNP 60Vcbo 45Vceo 7.0Vebo 8.0pF 4.0dB
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N4289
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
9 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 800 mV
- Gain Bandwidth Product fT
- 40 MHz
- DC Collector/Base Gain hfe Min
- 150 at 0.35 V, 1 mA
- DC Current Gain hFE Max
- 600 at 0.35 V, 1 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.