Central Semiconductor
40312
Bipolar Transistors - BJT NPN 4.0A 29W 60Vcbo 60Vceo
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 40312
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Collector-Emitter Saturation Voltage
- 1 V
- Gain Bandwidth Product fT
- 0.75 MHz
- DC Current Gain hFE Max
- 120 at 1 A
- Continuous Collector Current
- 4 A
- DC Collector/Base Gain hfe Min
- 20 at 1 A
- Pd - Power Dissipation
- 29 W
- Part # Aliases
- 40312 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.