Diodes Incorporated
ZXTN25100DGQTA
Bipolar Transistors - BJT 100V NPN High Gain 180V 85mOhm
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- ZXTN25100
- Package
- SOT-223-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 180 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 120 mV
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 175 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 900 at 10 mA, 2 V
- DC Collector/Base Gain hfe Min
- 300 at 10 mA, 2 V
Show more parameters (2)
- Pd - Power Dissipation
- 1.2 W
- Qualification
- AEC-Q101
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.