Central Semiconductor
2N3710
Bipolar Transistors - BJT NPN Gen Pur SS
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3710
- Package
- TO-92-3
- Mounting Style
- Through Hole
- RoHS
- T
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 1 V
- Maximum DC Collector Current
- 200 mA
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 330
- Height
- 5.33 mm
- Length
- 5.21 mm
Show more parameters (4)
- Width
- 4.19 mm
- DC Collector/Base Gain hfe Min
- 90
- Pd - Power Dissipation
- 625 mW
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.