Analog Devices
MAT01AHZ
Bipolar Transistors - BJT MATCHED MONO DUAL NPN
Basic Information
View Datasheet ↗- Manufacturer
- Analog Devices Inc.
- Brand
- Analog Devices
- Product Category
- Bipolar Transistors - BJT
- Series
- MAT01
- Package
- TO-78-6
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 45 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.12 V
- Maximum DC Collector Current
- 25 mA
- Gain Bandwidth Product fT
- 450 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 125 C
- DC Current Gain hFE Max
- 840
- Height
- 4.7 mm
Show more parameters (5)
- Length
- 9.4 mm
- Width
- 9.4 mm
- Continuous Collector Current
- 25 mA
- DC Collector/Base Gain hfe Min
- 500
- Pd - Power Dissipation
- 500 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.