WeEn Semiconductors
PHE13009/DG,127
Bipolar Transistors - BJT NPN POWER TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- WeEn Semiconductors
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-220AB-3
- Mounting Style
- Through Hole
- RoHS
- E
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 400 V
- Collector- Base Voltage VCBO
- 700 V
- Collector-Emitter Saturation Voltage
- 0.32 V
- Maximum DC Collector Current
- 12 A
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 40
- DC Collector/Base Gain hfe Min
- 8
- Pd - Power Dissipation
- 80 W
- Part # Aliases
- 934065587127
Show more parameters (1)
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.