STMicroelectronics
STB11NM80T4
MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Series
- STB11NM80
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 11 A
- Rds On - Drain-Source Resistance
- 400 mOhms
- Vgs - Gate-Source Voltage
- 30 V
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 150 W
- Configuration
- Single
- Channel Mode
- Enhancement
Show more parameters (12)
- Tradename
- MDmesh
- Height
- 4.6 mm
- Length
- 10.4 mm
- Transistor Type
- 1 N-Channel
- Type
- MOSFET
- Width
- 9.35 mm
- Forward Transconductance - Min
- 8 S
- Fall Time
- 15 ns
- Rise Time
- 17 ns
- Typical Turn-Off Delay Time
- 46 ns
- Typical Turn-On Delay Time
- 22 ns
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.