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onsemi

NVTFWS1D3N04XMTAG

MOSFETs 40V T10M IN U8FL GEN 2 PACKAGE

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFETs
Series
NVTFWS1D3N04XM
Package
WDFNW-8
Mounting Style
SMD/SMT
Packaging
Cut Tape

Technical Specifications

21 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
178 A
Rds On - Drain-Source Resistance
1.43 mOhms
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3.5 V
Qg - Gate Charge
36 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
83 W
Show more parameters (9)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
MY
Fall Time
8 ns
Forward Transconductance - Min
103 S
Rise Time
8 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
34 ns
Typical Turn-On Delay Time
21 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NVTFWS1D3N04XMTAG Specifications and Datasheet | ChipSourceHub