NXP Semiconductors
PBR941,215
Bipolar Transistors - BJT NPN UHF 50MA
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-236AB-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 10 V
- Collector- Base Voltage VCBO
- 20 V
- Emitter- Base Voltage VEBO
- 1.5 V
- Maximum DC Collector Current
- 0.05 A
- Gain Bandwidth Product fT
- 8 GHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 50 at 5 mA, 6 V
- Height
- 1 mm
- Length
- 3 mm
Show more parameters (6)
- Width
- 1.4 mm
- Continuous Collector Current
- 0.05 A
- DC Collector/Base Gain hfe Min
- 50 at 5 mA, 6 V
- Pd - Power Dissipation
- 360 mW
- Part # Aliases
- 934043060215
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.