Renesas Electronics
RBA80N10EANS-4UA07#HB0
MOSFETs Auto. MOS REXFET-1 100V 6.7mohm 5x6pkg
Basic Information
View Datasheet ↗- Manufacturer
- Renesas Electronics
- Product Category
- MOSFETs
- Series
- REXFET-1
- Package
- SO8-FL
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
12 parameters- Technology
- GaN
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 80 A
- Rds On - Drain-Source Resistance
- 6.7 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Qg - Gate Charge
- 43 nC
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- JP
- Transistor Type
- 1 N-Channel
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.