ON Semiconductor
NSBA114EDXV6T1G
Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- NSBA114EDXV6
- Package
- SOT-563-6
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Configuration
- Dual
- Transistor Polarity
- PNP
- Typical Input Resistor
- 10 kOhms
- Typical Resistor Ratio
- 1
- DC Collector/Base Gain hfe Min
- 35
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- - 0.1 A
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 357 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 35
Show more parameters (4)
- Height
- 0.55 mm
- Length
- 1.6 mm
- Width
- 1.2 mm
- Unit Weight
- 0.000106 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.