STMicroelectronics
STGW10M65DF2
IGBT Transistors PTD HIGH VOLTAGE
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- IGBT Transistors
- Series
- STGW10M65DF2
- Package
- TO-247-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.55 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 20 A
- Pd - Power Dissipation
- 115 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Continuous Collector Current Ic Max
- 20 A
- Gate-Emitter Leakage Current
- 250 uA
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.