Central Semiconductor
2N6049 PBFREE
Bipolar Transistors - BJT PNP 4.0A 75W 90Vcbo 55Vceo 0.5A
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N60
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
11 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 55 V
- Collector- Base Voltage VCBO
- 90 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Pd - Power Dissipation
- 75 W
- Gain Bandwidth Product fT
- 800 kHz
- Continuous Collector Current
- 4 A
- DC Collector/Base Gain hfe Min
- 25 at 500 mA
- DC Current Gain hFE Max
- 150 at 500 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.