Diodes Incorporated
DXT13003DK-13
Bipolar Transistors - BJT 450V NPN High Volt TO252 450V 700V
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- DXT13003
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 450 V
- Emitter- Base Voltage VEBO
- 9 V
- Collector-Emitter Saturation Voltage
- 0.4 V
- Maximum DC Collector Current
- 1.5 A
- Gain Bandwidth Product fT
- 4 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 25 at 1 A, 2 V
- DC Collector/Base Gain hfe Min
- 5 at 1 A, 2 V
- Pd - Power Dissipation
- 3.9 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.