STMicroelectronics
TIP36CW
Bipolar Transistors - BJT HIGH POWER TRANS
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- TIP36CW
- Package
- TO-247-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 25 A
- Gain Bandwidth Product fT
- 3 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 20.15 mm
- Length
- 15.75 mm
- Width
- 5.15 mm
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 25
- Pd - Power Dissipation
- 125000 mW
- Unit Weight
- 0.229281 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.