onsemi
KSC5026MOS
Bipolar Transistors - BJT NPN Si Transistor
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- KSC5026M
- Package
- TO-126-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 1.5 A
- Collector- Emitter Voltage VCEO Max
- 800 V
- Collector- Base Voltage VCBO
- 1.1 kV
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 2 V
- Pd - Power Dissipation
- 20 W
- Gain Bandwidth Product fT
- 15 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 1.5 A
Show more parameters (4)
- Country of Assembly
- CN
- Country of Diffusion
- CN
- Country of Origin
- CN
- Unit Weight
- 0.026843 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.