Diodes Incorporated
ZTX1149ASTZ
Bipolar Transistors - BJT PNP High Gain & Crnt
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- ZTX1149
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 25 V
- Collector- Base Voltage VCBO
- - 30 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 200 mV
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 135 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 270 at 10 mA, 2 V
- Height
- 4.01 mm
Show more parameters (6)
- Length
- 4.77 mm
- Width
- 2.41 mm
- Continuous Collector Current
- - 3 A
- DC Collector/Base Gain hfe Min
- 270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 195 at 2 A, 2 V, 115 at 5 A, 2 V
- Pd - Power Dissipation
- 1 W
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.