Toshiba
2SA1943N(S1,E,S)
Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SA1943N
- Package
- TO-3P-3
- Mounting Style
- Through Hole
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 230 V
- Collector- Base Voltage VCBO
- - 230 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 1.1 V
- Maximum DC Collector Current
- - 15 A
- Gain Bandwidth Product fT
- 30 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 160
- Continuous Collector Current
- - 15 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 35
- Pd - Power Dissipation
- 150 W
- Unit Weight
- 0.246918 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.