STMicroelectronics
RF2L16080CF2
RF MOSFET Transistors 80 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- RF MOSFET Transistors
- Package
- A2-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
14 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Rds On - Drain-Source Resistance
- 1 Ohms
- Operating Frequency
- 1.625 GHz
- Gain
- 18 dB
- Output Power
- 80 W
- Maximum Operating Temperature
- + 200 C
- Country of Origin
- CN
- Moisture Sensitive
- Yes
- Number of Channels
- 1 Channel
- Type
- RF Power MOSFET
Show more parameters (2)
- Vgs - Gate-Source Voltage
- - 6 V to + 10 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.