Infineon Technologies
IPA180N10N3 G
MOSFET N-Ch 100V 28A TO220FP-3 OptiMOS 3
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- OptiMOS 3
- Package
- TO-220FP-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 28 A
- Rds On - Drain-Source Resistance
- 18 mOhms
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 7 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 30 W
- Configuration
- Single
Show more parameters (12)
- Channel Mode
- Enhancement
- Tradename
- OptiMOS
- Height
- 16.15 mm
- Length
- 10.65 mm
- Transistor Type
- 1 N-Channel
- Width
- 4.85 mm
- Fall Time
- 3 ns
- Rise Time
- 5 ns
- Typical Turn-Off Delay Time
- 18 ns
- Typical Turn-On Delay Time
- 11 ns
- Part # Aliases
- IPA180N10N3GXKSA1 IPA18N1N3GXK SP000480108
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.