Central Semiconductor
2N3019 PBFREE
Bipolar Transistors - BJT NPN Gen Pur SS
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-39
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 1 A
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 140 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Pd - Power Dissipation
- 800 mW
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 1 A
Show more parameters (4)
- Country of Origin
- IN
- DC Collector/Base Gain hfe Min
- 100
- DC Current Gain hFE Max
- 300
- Unit Weight
- 0.083677 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.