onsemi
MJE200G
Bipolar Transistors - BJT 5A 25V 15W NPN
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- MJE200
- Package
- TO-225-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 5 A
- Collector- Emitter Voltage VCEO Max
- 25 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 8 V
- Collector-Emitter Saturation Voltage
- 1.8 V
- Pd - Power Dissipation
- 15 W
- Gain Bandwidth Product fT
- 65 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 5 A
Show more parameters (5)
- Country of Assembly
- CN
- Country of Diffusion
- MY
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 70
- Unit Weight
- 0.023986 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.