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ON Semiconductor

NSM80101MT1G

Bipolar Transistors - BJT NPN TRANS & SWCH DIODE

Basic Information

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Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - BJT
Series
NSM80101M
Package
SC-74-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

11 parameters
Transistor Polarity
NPN
Configuration
Dual
Collector- Emitter Voltage VCEO Max
80 V
Collector- Base Voltage VCBO
80 V
Emitter- Base Voltage VEBO
6 V
Maximum DC Collector Current
500 mA
Gain Bandwidth Product fT
150 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
120
Pd - Power Dissipation
400 mW

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NSM80101MT1G Specifications and Datasheet | ChipSourceHub