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MACOM

CGHV27060MP

GaN FETs GaN HEMT DC-2.7GHz, 60 Watt

Basic Information

View Datasheet ↗
Manufacturer
MACOM
Product Category
GaN FETs
Package
QSOP-20
Mounting Style
SMD/SMT
Packaging
Reel

Technical Specifications

17 parameters
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
150 V
Id - Continuous Drain Current
6.3 A
Vgs th - Gate-Source Threshold Voltage
- 3 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 90 C
Configuration
Single
Country of Origin
US
Gain
18.5 dB
Maximum Operating Frequency
2.7 GHz
Minimum Operating Frequency
0 Hz
Moisture Sensitive
Yes
Show more parameters (5)
Output Power
60 W
Technology
GaN
Transistor Type
GaN HEMT
Vgs - Gate-Source Breakdown Voltage
- 10 V to 2 V
Unit Weight
0.008508 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

CGHV27060MP Specifications and Datasheet | ChipSourceHub