ROHM Semiconductor
2SCR553RTL
Bipolar Transistors - BJT NPN 2A Ic 50V Vceo TSMT3
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TSMT-3
- Mounting Style
- SMD/SMT
- Packaging
- Single
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 130 mV
- Maximum DC Collector Current
- 4 A
- Gain Bandwidth Product fT
- 360 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450
- Continuous Collector Current
- 2 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 180
- Pd - Power Dissipation
- 1 W
- Part # Aliases
- 2SCR553R
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.