Vishay / Siliconix
SI6954ADQ-T1-E3
MOSFET 30V Vds 20V Vgs TSSOP-8
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- SI6
- Package
- TSSOP-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- E
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 3.4 A
- Rds On - Drain-Source Resistance
- 53 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 16 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1 W
Show more parameters (14)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Tradename
- TrenchFET
- Height
- 1.2 mm
- Length
- 4.4 mm
- Transistor Type
- 2 N-Channel
- Width
- 3 mm
- Forward Transconductance - Min
- 10 S
- Fall Time
- 8 ns
- Rise Time
- 10 ns
- Typical Turn-Off Delay Time
- 23 ns
- Typical Turn-On Delay Time
- 12 ns
- Part # Aliases
- SI6954ADQ-E3
- Unit Weight
- 0.005573 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.