MACOM
CGHV59070F
GaN FETs GaN HEMT 4.4-5.9GHz, 70 Watt
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- 440224
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
14 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 150 V
- Id - Continuous Drain Current
- 6.3 A
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- US
- Gain
- 14 dB
- Maximum Operating Frequency
- 5.9 GHz
- Minimum Operating Frequency
- 4.4 GHz
- Output Power
- 76 W
- Technology
- GaN
- Transistor Type
- GaN HEMT
Show more parameters (2)
- Vgs - Gate-Source Breakdown Voltage
- - 10 V, 2 V
- Unit Weight
- 0.275014 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.