Microchip Technology
2N2219A
Bipolar Transistors - BJT 30V 800mA 800mW NPN Small-Signal BJT THT
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Not compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 800 mA
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 75 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Pd - Power Dissipation
- 800 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 200 C
- Country of Origin
- PH
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 75 at 1 mA, 10 VDC
- DC Current Gain hFE Max
- 325 at 1 mA, 10 VDC
- Unit Weight
- 0.192949 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.