Infineon Technologies
BFR840L3RHESDE6327XTSA1
RF Bipolar Transistors RF BIP TRANSISTORS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFR840L3
- Package
- TSLP-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Type
- Bipolar
- Technology
- SiGe
- Collector- Emitter Voltage VCEO Max
- 2.25 V
- Emitter- Base Voltage VEBO
- 2.9 V
- Continuous Collector Current
- 35 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Operating Frequency
- 75 GHz
- Type
- RF Silicon Germanium
- Pd - Power Dissipation
- 75 mW
- Part # Aliases
- 840L3RHESD BFR BFR84L3RHESDE6327XT E6327 SP000978848
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.